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2N1671A Silicon Unijunction Transistor, TO-5 Package, 30V, 450mW
Solid State Inc. · MPN 2N1671A
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PN bar-type silicon unijunction transistor in a TO-5 3-pin metal can package. Designed for general purpose pulse circuits and firing circuits for silicon controlled rectifiers. 30V, 450 mW power dissipation, peak emitter current 50 mA, intrinsic stand-off ratio 0.62 max, inter-base resistance 9.1 kohm max, operates up to 140 degC.
| Device type | PN bar-type silicon unijunction transistor |
|---|---|
| Package | TO-5 (3-pin metal can) |
| Power dissipation | 450 mW |
| Voltage | 30 V |
| Emitter current, peak | 50 mA |
| Inter-base resistance (RBB) | 9.1 kohm max |
| Intrinsic stand-off ratio | 0.62 max |
| Valley current | 8.0 mA min |
| Peak point current | 25 uA max |
| Operating temperature | up to 140 degC |
| Applications | General purpose pulse circuits and firing circuits for silicon controlled rectifiers |